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| SEMICONDUCTOR TECHNICAL DATA ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES 2.5 Gate Drive. Low Threshold Voltage : Vth=0.5 High Speed. Small Package. Enhancement-Mode. KTK5134S N CHANNEL MOS FIELD EFFECT TRANSISTOR L E B L DIM A MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 1.5V. 2 3 D B C D E G H J K A G H 1 P P L M N P C N CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage DC Drain Current Drain Power Dissipation Channel Temperature Storage Temperature Range SYMBOL VDS VGSS ID PD Tch Tstg RATING 30 20 200 200 150 -55 150 UNIT V V mA mW 1. SOURCE 2. GATE 3. DRAIN K MAXIMUM RATING (Ta=25 ) M SOT-23 EQUIVALENT CIRCUIT D Marking Lot No. G Type Name KD S THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE. PLEASE HANDLE WITH CAUTION. ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Gate Leakage Current Drain-Source Breakdown Voltage Drain Cut-off Current Gate Threshold Voltage Forward Transfer Admittance Drain-Source ON Resistance Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Time Turn-on Time Turn-off Time ) TEST CONDITION VGS= 16V, VDS=0V MIN. 30 0.5 100 TYP. 1.2 70 23 58 60 120 MAX. 1 1 1.5 2 pF pF pF nS nS UNIT A V A V mS SYMBOL IGSS V(BR)DSS IDSS Vth |Yfs| RDS(ON) Ciss Crss Coss ton toff ID=100 A, VGS=0V VDS=30V, VGS=0V VDS=3V, ID=0.1mA VDS=3V, ID=50mA ID=50mA, VGS=2.5V VDS=3V, VGS=0V, f=1MHz VDS=3V, VGS=0V, f=1MHz VDS=3V, VGS=0V, f=1MHz VDD=3V, ID=10mA, VGS=0 2.5V 2001. 10. 29 Revision No : 0 J 1/3 KTK5134S I D - V DS I D - V DS 0.2 DRAIN CURRENT I D (A) 2.5V (LOW VOLTAGE REGION) 0.2 2.5V 1.9V COMMON SOURCE Ta=25 C 1.8V 1.9V 1.8V DRAIN CURRENT I D (A) COMMON SOURCE Ta=25 C 0.1 1.7V 1.6V 1.5V VGS =1.4V 0.1 1.7V 1.6V 1.5V VGS =1.4V 0 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE VDS (V) 0 0 0.4 0.8 1.2 1.6 2.0 DRAIN-SOURCE VOLTAGE VDS (V) I DR - V DS DRAIN REVERSE CURRENT I DR (A) 1 SOURCE VGS =0 Ta=25 C I D - V GS 1K DRAIN CURRENT ID (mA) 300 100 00 C 0.5 0.3 COMMON COMMON SOURCE VDS =3V 30 10 3 1 0.3 0.1 0 Ta=1 0.1 0.05 0.03 G D I DR S Ta=25 C Ta=-25 C 0.01 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 1 2 3 4 5 DRAIN-SOURCE VOTAGE VDS (V) GATE-SOURCE VOTAGE VGS (V) Y fs FORWARD TRANSFER ADMITTANCE Yfs (mS) 1K COMMON SOURCE V DS =3V Ta=25 C - ID 300 CAPACITANCE C (pF) C - V DS 500 300 100 50 30 COMMON EMITTER VGS =0 f=1MHz Ta=25 C C iss C oss 10 5 Crss 100 10 30 50 100 300 500 DRAIN CURRENT I D (mA) 0.1 0.3 0.5 1.0 3.0 5.0 10 30 DRAIN-SOURCE VOLTAGE VDS (V) 2001. 10. 29 Revision No : 0 2/3 KTK5134S VDS(ON) - I D 1K DRAIN-SOURCE ON VOLTAGE VDS(ON) (mV) 500 300 COMMON SOURCE VDS =2.5V Ta=25 C t - ID 1K SWITCHING TIME t (ns) 500 300 t off 100 50 30 10 5 3 100 50 30 t on tr ID 50 2.5V V IN 0 10s tf VOUT RL VDD 10 VDD =3V D.U. < 1% = VIN :t r , t f < 5ns (Z OUT =50) COMMON SOURCE Ta=25 C 10 30 50 100 300 500 1 3 5 10 30 50 100 DRAIN CURRENT I D (mA) DRAIN CURRENT I D (mA) P D - Ta DRAIN POWER DISSIPATION P D (mW) 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) SWITCHING TIME TEST CIRCUIT ID 2.5V VIN 0 10s VIN RL 50 VOUT VDD =3V D.U. < 1% = V IN :t r , t f < 5ns (Z OUT =50) COMMON SOURCE Ta=25 C VIN 2.5V 10% 90% 0 V DD VOUT V DS (ON) 10% 90% tr t on t off tf VDD 2001. 10. 29 Revision No : 0 3/3 |
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